By Robert Sedgewick
Represents the fundamental first half Sedgewick's whole paintings. Its 4 components: basics, information constructions, sorting, and looking. Appeals both to either the educational markets. Softcover.
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Extra resources for Algorithms in Java, Parts 1-4 (3rd Edition)
In sub-50-nm MOSFETs, due to short-channel effects, SiO2 needs to be scaled to ∼ 1 nm. Such thin gate oxides result in high gate direct tunneling leakage currents. Hence, the introduction of high-k gate dielectric became inevitable 20 A. M. Rao in sub-50-nm technologies. 6 eV), and thermal stability in contact with silicon. The VT shift in MOSFETs with high-k dielectric is primarily attributed to charge trapping in high-k layer . The trap density in high-k layer is much higher than SiO2 . Hence, at low stress voltages, VT shifts due to filling of existing traps.
For instance, base cell (b) is made of stacked pull-down trees, and hence is more sensitive to any global shift in NMOS threshold voltages. Similarly, base cell (d) consists of a pass gate in series with an inverter as the base cell and hence can be used to characterize variations in linear mode by suitably biasing the pass gate. In a more generic implementation, each of the stages of the ring oscillator can be a different gate. The only requirement in a ring oscillator-based sensor is that the total number of inversions around the loop be an odd number.
This can be seen from Fig. 11 which shows the droop in the supply voltage for Core 1 and Core 2 in the scenario that Core 2 turns on a few ns after Core 1. In both the scenarios, there is significant supply voltage droop. However, Core 2 has a much worse voltage droop than Core 1, since the voltage droop from Core 1 is coupled to Core 2 just as it turns on, creating an increased supply voltage noise effect. Such peak–voltage droop scenarios are very difficult to predict, model, or avoid and hence require sufficient guard-banding in the design.
Algorithms in Java, Parts 1-4 (3rd Edition) by Robert Sedgewick